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APTGF50X60RTP3 APTGF50X60BTP3
Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
*
VCES = 600V IC = 50A @ Tc = 80C
Application AC Motor control
Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray inductance High level of integration Internal thermistor for temperature monitoring
* * *
APTGF50X60RTP3: Without Brake (Pin 7 & 14 not connected)
21 20 19 18 17 16 15 14 13 12 11 10
Benefits * * * * * * * * Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile
22
9 8
23 7 24
1
2
3
4
5
6
All ratings @ Tj = 25C unless otherwise specified
September 2003 1-4 APTGF50X60BTP3 - Rev 0,
1. Absolute maximum ratings Diode rectifier Absolute maximum ratings
Symbol VRRM ID IFSM
Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms
TC = 80C Tj = 25C Tj = 150C
Max ratings 1600 80 500 400
Unit V A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTGF50X60RTP3 APTGF50X60BTP3
IGBT & Diode Brake (only for APTGF50X60BTP3) Absolute maximum ratings
Symbol VCES IC ICM VGE PD IF Parameter Collector - Emitter Breakdown Voltage TC = 25C TC = 80C TC = 25C TC = 25C TC = 80C Max ratings 600 35 25 70 20 155 10 Unit V A V W A
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation DC Forward Current
Absolute maximum ratings
IGBT & Diode Inverter
Symbol VCES IC ICM VGE PD RBSOA IF IFRM
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area DC Forward Current Repetitive Peak Forward Current
TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C TC = 80C tp = 1ms
Max ratings 600 70 50 125 20 250 225A @ 360V 30 80
Unit V A V W A
2. Electrical Characteristics Diodes Rectifier Electrical Characteristics
Symbol IR VF RthJC Characteristic Reverse Current Forward Voltage Junction to Case
Test Conditions VR = 1600V Tj = 150C Tj = 150C IF = 50A
Min
Typ 3 1.0
Max
Unit mA V
C/W
0.65
IGBT Brake & Diode (only for APTGF50X60BTP3) Electrical Characteristics
Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Cies Cres VF RthJC Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Reverse Transfer Capacitance Forward Voltage Junction to Case
Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE = 15V IC = 20A Tj = 125C VGE = VCE , IC = 0.5mA VGE = 20V, VCE = 0V VGE = 0V,VCE = 25V f = 1MHz Tj = 25C VGE = 0V IF = 10A Tj = 125C IGBT Diode
Min
4.5
Typ 1 2.0 2.2 5.5 1100 70 1.25 1.2
Max 500 2.5 6.5 400
Unit A V V nA pF
September 2003 2-4 APTGF50X60BTP3 - Rev 0,
1.7 0.8 2.3
V
C/W
APT website - http://www.advancedpower.com
APTGF50X60RTP3 APTGF50X60BTP3
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff VF Qrr RthJC Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Forward Voltage Reverse Recovery Charge Junction to Case Test Conditions VGE = 0V, IC = 500A VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 1 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 50A RG = 2.7 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 50A RG = 2.7 VGE = 0V IF = 50A IF = 50A VR = 300V di/dt=800A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C IGBT Diode Min 600 Typ 1 1.95 2.2 5.5 2200 200 40 9 120 12 42 10 132 21 1.0 1.25 1.2 3.4 5.6 0.5 0.8 ns mJ 1.6 V C
C/W
Max 500 2.45 6.5 400
Unit V A V V nA pF
4.5
ns
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K
Min
Typ 5 3375
Max
Unit k K
RT =
R25 exp B25 / 50 11 - T25 T
T: Thermistor temperature RT: Thermistor value at T
APT website - http://www.advancedpower.com
3-4
APTGF50X60BTP3 - Rev 0,
Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight
3. Thermal and package characteristics
Min 2500 -40 -40 -40
Typ
Max 150 125 125 3.3 300
Unit
September 2003
V C N.m g
M5
APTGF50X60RTP3 APTGF50X60BTP3
4. Package outline
PIN 1 PIN 24
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
4-4
APTGF50X60BTP3 - Rev 0,
September 2003

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